CZ Silicon Wafer
- Size
- 2″ – 18″ (50.8 – 450 mm)
- Orientation
- <100> <111> <110>
- Dopant
- B, P, As, Sb — P / N type
- Resistivity
- 0.01 – 100 Ω·cm
- Grade
- Prime / Prime & Test / Mechanical
ELMATECH · CO., LTD.
Now&Future
Elmatech engineers the wafers, conductive inks and micro‑optics inside modern electronics — and is building what comes after: atomic‑scale power and augmented‑reality platforms.
Company 회사소개
From a trading company to a materials technology company
Elmatech was founded in Seoul in 2001. What began as a small trading company has grown, one wafer material at a time, into a technology company spanning semiconductor substrates, betavoltaic power and AR/VR platforms.
새로운 분야를 개척하고, 고객과 함께 성장하는
재료 전문 기업이 되겠습니다.Elmatech pursues new, specialized fields that help our customers — developing advanced materials so we can grow together with the people who rely on us.
— Elmatech Co., Ltd.
ELMA
Electronic Material Advanced Technology
Elmatech's name is shorthand for Electronic Material Advanced Technology — the same initials that head our Electrical Material Area (EMA) business today. The wordmark's gradient, deepening from navy to sky blue, is meant to read as stability: a materials partner built to last.
Company timeline
- 2001Founded as a trading company (Founder: Molee · Co‑founder: Wilson Kang)
- 2002Developed plastic substrates for military applications
- 2003Developed CMP slurry additives and lapping agents
- 2004Opened the Anyang branch
- 2005Supplied 200mm glass substrate to "S" company
- 2006Began supplying SOI wafers
- 2007Converted from a private to a corporate entity
- 2008Developed a 12″ glass wafer for TSV processes
- 2012Introduced GaN templates to power‑device manufacturers
- TodayExpanding into betavoltaic power (NBA) and AR/VR platforms (AR), alongside continued growth in wafers, conductive materials and SiC/GaN substrates
01Electrical Material Area (EMA) 전자재료 사업
Precision substrates & conductive materials
From bare silicon to bonded SOI stacks, Elmatech supplies the wafers, silver‑nano inks and UV‑optical windows that go into semiconductor, display and sensor manufacturing.
1.1Wafers
FZ Silicon Wafer
- Size
- 2″ – 6″ (50.8 – 150 mm)
- Method
- FZ, FZ‑GD, FZ‑NTD
- Orientation
- <100> <111>
- Type
- P / B, N / Phos, Undoped
- Resistivity
- 1 – 50,000 Ω·cm
Glass / Quartz Wafer
- Size
- 100 – 300 mm (4″ – 12″)
- Material
- Fused / Synthetic quartz, TSV‑grade glass
- Thickness
- 0.725 – 1.0 mm
- Strain / Anneal pt.
- >1015℃ / >1115℃
- Finish
- Polished, TTV < 5 – 15 µm
SOI / SOS Special Wafer
- Diameter
- 150 / 200 / 300 mm
- Process
- Simox, Smart‑Cut
- Top (SOI) layer
- 20 nm – 150 µm
- Buried oxide
- 50 nm – 3.0 µm
- Handle wafer
- 300 – 750 µm
Ge Wafer
- Size
- 2″ – 4″, custom up to 70×70 mm
- Growth
- CZ
- Application
- Microelectronics, infrared optics
- Orientation
- <100> <111>
- Resistivity
- <0.05 Ω·cm (N) · >35 Ω·cm (S.I.)
SiC Wafer
- Size
- 2″ – 4″
- Orientation
- <0001>, off‑axis 4° – 8° toward <11‑20>
- Resistivity
- 4H‑N 0.01 – 0.1 Ω·cm · 6H‑SI >1E5 Ω·cm
- Micropipe density
- ≤ 10 – 100 /cm²
- Finish
- CMP polished, Ra 0.5 – 1 nm
GaAs Wafer
- Size
- 2″ – 6″
- Growth
- VGF
- Application
- LED, LD, microelectronics
- Type
- SI / N / P, Zn or Si doped
- Resistivity
- 1.5 – 9×10⁻³ Ω·cm (doped)
Sapphire Wafer
- Size
- 3″ – 12″
- Growth
- KP, HAM
- Grade
- Microelectronic / LED
- Orientation
- C‑plane, R‑plane (special on request)
- Thickness
- 300 – 1100 µm
EPI Wafer
- Size
- 3″ – 8″
- Substrate
- 380 – 725 µm, 0.001 – 5,000 Ω·cm
- Epi thickness
- 0.1 – 150 µm
- Epi resistivity
- 0.01 – 500 Ω·cm
- Layers
- Single or double (N/N+, P/P+, N/P+…)
New
GaN Template & SiC‑on‑Si (SoS) Wafer
- SoS wafer
- 2″ / 4″ / 6″
- SiC‑on‑Si
- Up to 200 mm (8″)
- 3C‑SiC layer
- 2.7 ± 0.5 µm, <111>
- Resistivity
- 1 – 30 Ω·cm
- Application
- Power devices, LED
Bonded SOI process flow
Bond Wafer
oxidation
or
or
Handle Wafer
Bonding→Annealing→Grinding→Polishing
1.2Process Service
Thin‑film deposition and growth services on customer wafers, from 2″ to 12″ depending on process.
Oxide
ThermalUSG / PECVDTEOS / HDPCoRAL
Nitride
LPCVDPECVD
Metal
TiTaCuAlTaNTiNTiWWCrAuPt
Other films
PolysiliconBPSGSiCPhotoresistPolyimideFSGAmorphous Carbon
1.3Consumables & Process Materials
Everything between ingot and finished wafer — crystal‑growth, slicing, lapping and polishing consumables, plus film for module encapsulation.
Crystal growth & slicing
- Quartz crucibles for mono‑crystal growing
- Diamond wire, 0.12–0.16 mm — ingot cropping / squaring, sapphire ingot wire sawing
- Water‑soluble wire‑saw oil · PWS 30R coolant
Lapping, polishing & etching
- PLS40B / PLS10 lapping suspension
- PLC80 / PLC100 / PLP100 cleaner
- NaOH caustic etchant (ET‑5288)
EVA Film
- Solar‑module encapsulation film
- Thickness 0.4 / 0.5 / 0.6 mm — fast‑ and standard‑cure grades
- Light transmittance ≥ 90%
1.4Silver Nano Paste
Silver‑nanoparticle ink for roll‑to‑roll flexo printing on PET and other film substrates — for EMI shielding, metal‑mesh transparent conductors, and fine‑pitch printed circuits.
Example 1
Grid Print
- Surface resistance
- 10 Ω/□
- Light transmittance
- 83% (base film 92%)
- Thickness
- 0.5 µm
Example 2
Fine & Thin Line
- Line width
- 60 µm
- Thickness
- 0.5 µm (adjustable)
Example 3
Narrow Pitch
- Line / Space
- 60 / 60 µm
1.5Quartz Cover Window
UV‑LED cover windows and UV‑chip windows engineered for sterilization and UV‑curing applications.
02New Battery Area (NBA) 차세대 배터리 사업
Betavoltaic — power drawn from radioactive decay
A betavoltaic cell converts beta particles emitted by a radioisotope directly into electrical current through a semiconductor junction — delivering power for years to decades without recharging.
2.1 Betta Battery (Atomic Battery)
Ni‑63 beta source
Front Contact
p‑type GaN emitter layer
n‑type Si base layer
Back Contact
β particles emitted by Ni‑63 strike a p–n junction and are absorbed as electron–hole pairs — generating a steady current, the same principle as a solar cell, but powered by isotopic decay instead of light.
Radioisotope comparison
| Radioisotope | Output (keV) | Half‑life (yr) |
|---|---|---|
| Ni‑63 | 17 | 100 |
| H‑3 | 5.7 | 12 |
| Sr‑90 / Y‑90 | 200 / 930 | 29 |
| Po‑210 | 5,300 | 0.38 |
| Pu‑238 | 5,500 | 88 |
Ni‑63 is used in Elmatech's Betta Battery for its long half‑life and low‑energy, shielding‑friendly emission.
03AR Platform AR/VR 플랫폼 사업
Interfaces for what you see next
Elmatech builds the software layer that overlays useful information on the real world — and the virtual spaces that replace it entirely.
3.1
Augmented Reality Platform
Real‑time overlays — navigation, distance and object data layered directly onto the physical world through smart‑glass optics.
3.2
Virtual Reality Exhibition Platform
Immersive virtual exhibition spaces for showcasing products, spaces and events without physical build‑out.
Contact 문의하기
Talk to Elmatech
Product inquiries, samples, or partnership questions — reach us directly.
- Email elmatech@outlook.com wilson@elmatech.com
- Phone +82 (0)2‑508‑3507
- Fax +82 (0)2‑508‑3508
-
Address 주소
(06083) 서울특별시 강남구 영동대로 602, P187
P187, 602 Yeongdong‑daero, Gangnam‑gu,
Seoul 06083, Republic of Korea -
Warehouse 물류센터
(12902) 경기도 하남시 미사강변한강로 165, 현대 클러스터3차 208호
Room 208, Hyundai Cluster 3rd, 165 Misagangbyeonhangang‑ro,
Hanam‑si, Gyeonggi‑do 12902, Republic of Korea